? 2006 ixys all rights reserved g = gate d = drain s = source tab = drain ds99426e(04/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 50 a 3.0 5.5 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 1.7 pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (ixta) to-220 (ixtp) d (tab) g s g s (tab) ixta 5n60p ixtp 5n60p v dss = 600 v i d25 = 5 a r ds(on) 1.7 symbol test conditions maximum ratings v dss t j = 25 c to 175 c 600 v v dgr t j = 25 c to 175 c; r gs = 1 m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c5a i dm t c = 25 c, pulse width limited by t jm 10 a i ar t c = 25 c5a e ar t c = 25 c20mj e as t c = 25 c 360 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 18 p d t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g
ixys reserves the right to change limits, test conditions, and dimensions. ixta 5n60p ixtp 5n60p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 3.0 5.0 s c iss 750 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 78 pf c rss 6.3 pf t d(on) 22 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 24 ns t d(off) r g = 18 (external) 55 ns t f 17 ns q g(on) 14.2 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 4.8 nc q gd 4.8 nc r thjc 1.25 c/w r thcs (to-220) 0.25 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 5 a i sm repetitive 15 a v sd i f = i s , v gs = 0 v, i f = 5 a, -di/dt = 100 a/ s 1.5 v t rr pulse test, t 300 s, duty cycle d 2 % 500 ns ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-263 (ixta) outline to-220 (ixtp) outline pins: 1 - gate 2 - drain 3 - source 4 - drain
? 2006 ixys all rights reserved ixta 5n60p ixtp 5n60p fig. 2. extended output characteristics @ 25 o c 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig. 3. output characteristics @ 125 o c 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0246810121416 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 1. output characteristics @ 25 o c 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0123 45678 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig. 4. r ds(on ) norm alize d to 0.5 i d25 value vs. junction tem perature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 5a i d = 2.5a v gs = 10v fig. 6. drain current vs. case tem perature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alize d to 0.5 i d25 value vs . i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 012345678910 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixta 5n60p ixtp 5n60p fig. 11. capacitance 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10121416 q g - nanocoulombs v g s - volts v ds = 300v i d = 2.5a i g = 10ma fig. 7. input adm ittance 0 1 2 3 4 5 6 44.5 55.5 6 6.5 7 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 1 2 3 4 5 6 7 8 9 01 234 56 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 2 4 6 8 10 12 14 0.5 0.6 0.7 0.8 0.9 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. m axim um transient therm al resistance 0.01 0.10 1.00 10.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
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